IQAA40SC120B1

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The IQAA40SC120B1 from iQXPRZ Power is a MOSFET with Continous Drain Current 40 A, Drain Source Resistance 0.049 ohm, Drain Source Breakdown Voltage 1200 V, Gate Charge 98.4 nC, Switching Speed 40 ns. More details for IQAA40SC120B1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IQAA40SC120B1
  • Manufacturer
    iQXPRZ Power
  • Description
    1200 V, 40 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    40 A
  • Drain Source Resistance
    0.049 ohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Charge
    98.4 nC
  • Switching Speed
    40 ns
  • Industry
    Industrial, Commercial

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