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INJ021AAP1

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The INJ021AAP1 from Isahaya Electronics is a MOSFET with Continous Drain Current -1200 mA, Drain Source Resistance 0.7 ohm, Drain Source Breakdown Voltage -100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -1.0 to -2.5 V. Tags: Surface Mount. More details for INJ021AAP1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    INJ021AAP1
  • Manufacturer
    Isahaya Electronics
  • Description
    -100 V, -1200 mA, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -1200 mA
  • Drain Source Resistance
    0.7 ohm
  • Drain Source Breakdown Voltage
    -100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -1.0 to -2.5 V
  • Switching Speed
    250 to 530 ns
  • Power Dissipation
    0.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    SC-62
  • Applications
    switching
  • Note
    Input Capacitance :- 800 pF

Technical Documents
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