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INK013EAP1

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The INK013EAP1 from Isahaya Electronics is a MOSFET with Continous Drain Current 0.5 A, Drain Source Resistance 16 to 25 ohm, Drain Source Breakdown Voltage 500 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.0 to 4.0 V. Tags: Surface Mount. More details for INK013EAP1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    INK013EAP1
  • Manufacturer
    Isahaya Electronics
  • Description
    500 V , 0.5 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.5 A
  • Drain Source Resistance
    16 to 25 ohm
  • Drain Source Breakdown Voltage
    500 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.0 to 4.0 V
  • Switching Speed
    10 to 60 ns
  • Power Dissipation
    0.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    SC-62
  • Applications
    DC-DC converter, High Voltage Switching
  • Note
    Input Capacitance :- 60 pF

Technical Documents
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