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INK021ABS1

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The INK021ABS1 from Isahaya Electronics is a MOSFET with Continous Drain Current 1.4 A, Drain Source Resistance 0.2 to 0.35 ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.0 to 2.5 V. Tags: Surface Mount. More details for INK021ABS1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    INK021ABS1
  • Manufacturer
    Isahaya Electronics
  • Description
    100 V, 1.4 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1.4 A
  • Drain Source Resistance
    0.2 to 0.35 ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.0 to 2.5 V
  • Switching Speed
    580 to 910 ns
  • Power Dissipation
    0.6 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    TO-92S
  • Applications
    Switching
  • Note
    Input Capacitance :- 660 pF

Technical Documents
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