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INKA114AP1

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The INKA114AP1 from Isahaya Electronics is a MOSFET with Continous Drain Current 0.7 A, Drain Source Resistance 1.1 to 1.8 ohm, Drain Source Breakdown Voltage 38 to 62 V, Gate Source Voltage 10 V, Gate Source Threshold Voltage 1.0 to 2.5 V. Tags: Surface Mount. More details for INKA114AP1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    INKA114AP1
  • Manufacturer
    Isahaya Electronics
  • Description
    38 to 62 V, 0.7 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.7 A
  • Drain Source Resistance
    1.1 to 1.8 ohm
  • Drain Source Breakdown Voltage
    38 to 62 V
  • Gate Source Voltage
    10 V
  • Gate Source Threshold Voltage
    1.0 to 2.5 V
  • Switching Speed
    900 to 2100 ns
  • Power Dissipation
    0.65 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    SC-62
  • Applications
    Motor, Solenoid drive
  • Note
    Input Capacitance :- 8 pF

Technical Documents
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