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INKA214AP1

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The INKA214AP1 from Isahaya Electronics is a MOSFET with Continous Drain Current 2.0 A, Drain Source Resistance 150 to 200 milli-ohm, Drain Source Breakdown Voltage 38 to 62 V, Gate Source Voltage 10 V, Gate Source Threshold Voltage 1.0 to 2.5 V. Tags: Surface Mount. More details for INKA214AP1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    INKA214AP1
  • Manufacturer
    Isahaya Electronics
  • Description
    38 to 62 V, 2.0 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2.0 A
  • Drain Source Resistance
    150 to 200 milli-ohm
  • Drain Source Breakdown Voltage
    38 to 62 V
  • Gate Source Voltage
    10 V
  • Gate Source Threshold Voltage
    1.0 to 2.5 V
  • Switching Speed
    800 to 2800 ns
  • Power Dissipation
    0.75 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    SC-62
  • Applications
    Motor, Solenoid drive
  • Note
    Input Capacitance :- 20 pF

Technical Documents
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