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ISM06NS2-56

MOSFET by ISOCOM (59 more products)
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The ISM06NS2-56 from ISOCOM is a MOSFET with Continous Drain Current 56 A, Drain Source Resistance 0.012 ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage 1.0 to 2.0 V. Tags: Surface Mount. More details for ISM06NS2-56 can be seen below.

Product Specifications

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Product Details

  • Part Number
    ISM06NS2-56
  • Manufacturer
    ISOCOM
  • Description
    60 V, 56 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    56 A
  • Drain Source Resistance
    0.012 ohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    1.0 to 2.0 V
  • Gate Charge
    140 nC
  • Switching Speed
    90 to 140 ns
  • Power Dissipation
    250 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial, Military
  • Package Type
    Surface Mount
  • Package
    SMD 2.0
  • Applications
    Space equipment and systems, Military equipment and systems, Solar Inverters, Power Supplies, High Voltage DC-DC Converters
  • Note
    Input Capacitance :- 10220 pF

Technical Documents
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