1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. ISOCOM
  6. ISM06NT2-2

ISM06NT2-2

MOSFET by ISOCOM (59 more products)
Download Datasheet Request Quote

Note : Your request will be directed to ISOCOM.

The ISM06NT2-2 from ISOCOM is a MOSFET with Continous Drain Current 1.6 A, Drain Source Resistance 0.65 ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage 1.0 to 2.0 V. Tags: Through Hole. More details for ISM06NT2-2 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    ISM06NT2-2
  • Manufacturer
    ISOCOM
  • Description
    60 V, 1.6 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1.6 A
  • Drain Source Resistance
    0.65 ohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    1.0 to 2.0 V
  • Gate Charge
    2.6 nC
  • Switching Speed
    6.5 to 30 ns
  • Power Dissipation
    5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial, Military
  • Package Type
    Through Hole
  • Package
    TO-39
  • Applications
    Space equipment and systems, Military equipment and systems, Solar Inverters, Power Supplies, High Voltage DC-DC Converters
  • Note
    Input Capacitance :- 152 pF

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products