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ISM06NT4-20

MOSFET by ISOCOM (59 more products)
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The ISM06NT4-20 from ISOCOM is a MOSFET with Continous Drain Current 20 A, Drain Source Resistance 0.045 ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage 1.0 to 2.0 V. Tags: Through Hole. More details for ISM06NT4-20 can be seen below.

Product Specifications

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Product Details

  • Part Number
    ISM06NT4-20
  • Manufacturer
    ISOCOM
  • Description
    60 V, 20 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    20 A
  • Drain Source Resistance
    0.045 ohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    1.0 to 2.0 V
  • Gate Charge
    34 nC
  • Switching Speed
    26 to 60 ns
  • Power Dissipation
    75 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial, Military
  • Package Type
    Through Hole
  • Package
    TO-254AA
  • Applications
    Space equipment and systems, Military equipment and systems, Solar Inverters, Power Supplies, High Voltage DC-DC Converters
  • Note
    Input Capacitance :- 2025 pF

Technical Documents
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