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ISM10NUB-3

MOSFET by ISOCOM (59 more products)
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The ISM10NUB-3 from ISOCOM is a MOSFET with Continous Drain Current 3.0 A, Drain Source Resistance 0.26 to 0.31 ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for ISM10NUB-3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    ISM10NUB-3
  • Manufacturer
    ISOCOM
  • Description
    100 V, 3.0 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    3.0 A
  • Drain Source Resistance
    0.26 to 0.31 ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    9 to 13 nC
  • Switching Speed
    2 to 18.8 ns
  • Power Dissipation
    1.25 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial, Military
  • Package Type
    Surface Mount
  • Package
    UB
  • Applications
    Space equipment and systems, Military equipment and systems, Solar Inverters, Power Supplies, High Voltage DC-DC Converters
  • Note
    Input Capacitance :- 508 pF

Technical Documents
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