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ISM120NS1-19

MOSFET by ISOCOM (59 more products)
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The ISM120NS1-19 from ISOCOM is a MOSFET with Continous Drain Current 12.5 to 19 A, Drain Source Resistance 160 to 290 milli-ohm, Drain Source Breakdown Voltage 1200 V, Gate Source Voltage -10 to 25 V, Gate Source Threshold Voltage 1.8 to 2.5 V. Tags: Surface Mount. More details for ISM120NS1-19 can be seen below.

Product Specifications

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Product Details

  • Part Number
    ISM120NS1-19
  • Manufacturer
    ISOCOM
  • Description
    1200 V, 12.5 to 19 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    12.5 to 19 A
  • Drain Source Resistance
    160 to 290 milli-ohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Voltage
    -10 to 25 V
  • Gate Source Threshold Voltage
    1.8 to 2.5 V
  • Gate Charge
    34 nC
  • Switching Speed
    9 to 16 ns
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial, Military
  • Package Type
    Surface Mount
  • Package
    SMD 1.0
  • Applications
    Space equipment and systems, Military equipment and systems, Solar Inverters, Power Supplies, High Voltage DC-DC Converters
  • Note
    Input Capacitance :- 525 pF

Technical Documents
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