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ISM20NS0-20

MOSFET by ISOCOM (59 more products)
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The ISM20NS0-20 from ISOCOM is a MOSFET with Continous Drain Current 20 A, Drain Source Resistance 0.1 to 0.13 ohm, Drain Source Breakdown Voltage 200 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3.0 to 5.0 V. Tags: Surface Mount. More details for ISM20NS0-20 can be seen below.

Product Specifications

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Product Details

  • Part Number
    ISM20NS0-20
  • Manufacturer
    ISOCOM
  • Description
    200 V, 20 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    20 A
  • Drain Source Resistance
    0.1 to 0.13 ohm
  • Drain Source Breakdown Voltage
    200 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3.0 to 5.0 V
  • Gate Charge
    30 to 60 nC
  • Switching Speed
    4 to 88 ns
  • Power Dissipation
    112 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial, Military
  • Package Type
    Surface Mount
  • Package
    SMD 0.5
  • Applications
    Space equipment and systems, Military equipment and systems, Solar Inverters, Power Supplies, High Voltage DC-DC Converters
  • Note
    Input Capacitance :- 2600 pF

Technical Documents
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