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FQP50N06

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The FQP50N06 from JSMicro Semiconductor is a MOSFET with Continous Drain Current 35.4 to 50 A, Drain Source Resistance 0.022 ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -25 to 25 V, Gate Source Threshold Voltage 2.0 to 4.0 V. Tags: Through Hole. More details for FQP50N06 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FQP50N06
  • Manufacturer
    JSMicro Semiconductor
  • Description
    60 V, 35.4 to 50 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    35.4 to 50 A
  • Drain Source Resistance
    0.022 ohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -25 to 25 V
  • Gate Source Threshold Voltage
    2.0 to 4.0 V
  • Gate Charge
    31 to 41 nC
  • Switching Speed
    15 to 220 ns
  • Power Dissipation
    120 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Note
    Input Capacitance :- 1540 pF

Technical Documents
View details on the manufacturer's website
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