1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. JSMicro Semiconductor
  6. GP3139

GP3139

Download Datasheet Request Quote

Note : Your request will be directed to JSMicro Semiconductor.

The GP3139 from JSMicro Semiconductor is a MOSFET with Continous Drain Current -0.8 A, Drain Source Resistance 290 to 495 milli-ohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -0.35 to -1.0 V. Tags: Surface Mount. More details for GP3139 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    GP3139
  • Manufacturer
    JSMicro Semiconductor
  • Description
    -20 V, -0.8 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -0.8 A
  • Drain Source Resistance
    290 to 495 milli-ohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -0.35 to -1.0 V
  • Switching Speed
    5.7 to 32.6 ns
  • Power Dissipation
    0.15 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-523
  • Applications
    Load/Power Switching, Interfacing, Logic Switching, Battery Management for Ultra Small Portable Electonics
  • Note
    Input Capacitance :- 113 pF

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products