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IRF830PBF

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The IRF830PBF from JSMicro Semiconductor is a MOSFET with Continous Drain Current 2.5 to 4.0 A, Drain Source Resistance 2.2 to 2.6 ohm, Drain Source Breakdown Voltage 550 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.0 to 4.0 V. Tags: Through Hole. More details for IRF830PBF can be seen below.

Product Specifications

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Product Details

  • Part Number
    IRF830PBF
  • Manufacturer
    JSMicro Semiconductor
  • Description
    550 V, 2.5 to 4.0 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2.5 to 4.0 A
  • Drain Source Resistance
    2.2 to 2.6 ohm
  • Drain Source Breakdown Voltage
    550 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.0 to 4.0 V
  • Gate Charge
    12 nC
  • Switching Speed
    30 to 75 ns
  • Power Dissipation
    33 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    High Frequency Switching Mode Power Supply, Active Power Factor Correction
  • Note
    Input Capacitance :- 560 pF

Technical Documents
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