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IRF9Z24N

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The IRF9Z24N from JSMicro Semiconductor is a MOSFET with Continous Drain Current -17 A, Drain Source Resistance 61 to 125 milli-ohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage -1.0 to -3.0 V. Tags: Through Hole. More details for IRF9Z24N can be seen below.

Product Specifications

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Product Details

  • Part Number
    IRF9Z24N
  • Manufacturer
    JSMicro Semiconductor
  • Description
    -60 V, -17 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -17 A
  • Drain Source Resistance
    61 to 125 milli-ohm
  • Drain Source Breakdown Voltage
    -60 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    -1.0 to -3.0 V
  • Gate Charge
    29.4 nC
  • Switching Speed
    4.0 to 90 ns
  • Power Dissipation
    50 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Note
    Input Capacitance :- 1135 pF

Technical Documents
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