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JSM10N15D

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The JSM10N15D from JSMicro Semiconductor is a MOSFET with Continous Drain Current 10 A, Drain Source Resistance 182 to 450 milli-ohm, Drain Source Breakdown Voltage 150 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.0 to 3.0 V. Tags: Surface Mount. More details for JSM10N15D can be seen below.

Product Specifications

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Product Details

  • Part Number
    JSM10N15D
  • Manufacturer
    JSMicro Semiconductor
  • Description
    150 V, 10 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    10 A
  • Drain Source Resistance
    182 to 450 milli-ohm
  • Drain Source Breakdown Voltage
    150 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.0 to 3.0 V
  • Switching Speed
    60 to 250 ns
  • Power Dissipation
    54 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-252
  • Applications
    DC/DC Converters, high efficiency switching for power management in portable and battery operated products, power management interface card for TV or Monitor.
  • Note
    Input Capacitance :- 660 pF

Technical Documents
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