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JSM125N04D

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The JSM125N04D from JSMicro Semiconductor is a MOSFET with Continous Drain Current 85 to 120 A, Drain Source Resistance 3.6 to 7.0 milli-ohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.5 V. Tags: Surface Mount. More details for JSM125N04D can be seen below.

Product Specifications

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Product Details

  • Part Number
    JSM125N04D
  • Manufacturer
    JSMicro Semiconductor
  • Description
    40 V, 85 to 120 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    85 to 120 A
  • Drain Source Resistance
    3.6 to 7.0 milli-ohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.5 V
  • Gate Charge
    75 nC
  • Switching Speed
    15 to 52 ns
  • Power Dissipation
    120 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-252
  • Note
    Input Capacitance :- 5400 pF

Technical Documents
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