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JSM130P06B

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The JSM130P06B from JSMicro Semiconductor is a MOSFET with Continous Drain Current -130 A, Drain Source Resistance 11 to 16 milli-ohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -1.2 to -2.4 V. Tags: Surface Mount. More details for JSM130P06B can be seen below.

Product Specifications

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Product Details

  • Part Number
    JSM130P06B
  • Manufacturer
    JSMicro Semiconductor
  • Description
    -60 V, -130 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -130 A
  • Drain Source Resistance
    11 to 16 milli-ohm
  • Drain Source Breakdown Voltage
    -60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -1.2 to -2.4 V
  • Gate Charge
    62.1 nC
  • Switching Speed
    18 to 55 ns
  • Power Dissipation
    150 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-263
  • Applications
    Load Switch
  • Note
    Input Capacitance :- 5604 pF

Technical Documents
View details on the manufacturer's website
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