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JSM50N20P

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The JSM50N20P from JSMicro Semiconductor is a MOSFET with Continous Drain Current 50 A, Drain Source Resistance 42 to 50 milli-ohm, Drain Source Breakdown Voltage 200 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.0 to 4.0 V. Tags: Surface Mount. More details for JSM50N20P can be seen below.

Product Specifications

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Product Details

  • Part Number
    JSM50N20P
  • Manufacturer
    JSMicro Semiconductor
  • Description
    200 V, 50 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    50 A
  • Drain Source Resistance
    42 to 50 milli-ohm
  • Drain Source Breakdown Voltage
    200 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.0 to 4.0 V
  • Power Dissipation
    277 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-3P
  • Applications
    High Frequency switch mode power supplies, Electronic lamp ballasts based on half bridge, UPS
  • Note
    Input Capacitance :- 4225 pF

Technical Documents
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