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JSM7N80F

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The JSM7N80F from JSMicro Semiconductor is a MOSFET with Continous Drain Current 4.4 to 7.0 A, Drain Source Resistance 1.4 to 1.7 ohm, Drain Source Breakdown Voltage 800 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.0 to 4.0 V. Tags: Through Hole. More details for JSM7N80F can be seen below.

Product Specifications

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Product Details

  • Part Number
    JSM7N80F
  • Manufacturer
    JSMicro Semiconductor
  • Description
    800 V, 4.4 to 7.0 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4.4 to 7.0 A
  • Drain Source Resistance
    1.4 to 1.7 ohm
  • Drain Source Breakdown Voltage
    800 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.0 to 4.0 V
  • Gate Charge
    27 nC
  • Switching Speed
    35 to 100 ns
  • Power Dissipation
    48 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220F
  • Applications
    High Frequency Switching Mode Power Supply, Active Power Factor Correction
  • Note
    Input Capacitance :- 1290 pF

Technical Documents
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