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JSM80P03D

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The JSM80P03D from JSMicro Semiconductor is a MOSFET with Continous Drain Current 67.2 to 95 A, Drain Source Resistance 4.1 to 8.5 milli-ohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.0 to 2.2 V. Tags: Surface Mount. More details for JSM80P03D can be seen below.

Product Specifications

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Product Details

  • Part Number
    JSM80P03D
  • Manufacturer
    JSMicro Semiconductor
  • Description
    -30 V, 67.2 to 95 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    67.2 to 95 A
  • Drain Source Resistance
    4.1 to 8.5 milli-ohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.0 to 2.2 V
  • Gate Charge
    38.4 nC
  • Switching Speed
    6 to 30 ns
  • Power Dissipation
    100 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-252
  • Note
    Input Capacitance :- 1784 pF

Technical Documents
View details on the manufacturer's website
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