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JSM8DN06

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The JSM8DN06 from JSMicro Semiconductor is a MOSFET with Continous Drain Current 6.0 to 8.0 A, Drain Source Resistance 16 to 25 milli-ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.0 to 2.5 V. Tags: Surface Mount. More details for JSM8DN06 can be seen below.

Product Specifications

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Product Details

  • Part Number
    JSM8DN06
  • Manufacturer
    JSMicro Semiconductor
  • Description
    60 V, 6.0 to 8.0 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    6.0 to 8.0 A
  • Drain Source Resistance
    16 to 25 milli-ohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.0 to 2.5 V
  • Gate Charge
    49 nC
  • Switching Speed
    5.0 to 28.1 ns
  • Power Dissipation
    3.6 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOP-8
  • Note
    Input Capacitance :- 2899 pF

Technical Documents
View details on the manufacturer's website
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