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JSM8N60FN

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The JSM8N60FN from JSMicro Semiconductor is a MOSFET with Continous Drain Current 4.7 to 7.0 A, Drain Source Resistance 0.89 to 0.99 ohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -25 to 25 V, Gate Source Threshold Voltage 2.0 to 4.0 V. Tags: Through Hole. More details for JSM8N60FN can be seen below.

Product Specifications

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Product Details

  • Part Number
    JSM8N60FN
  • Manufacturer
    JSMicro Semiconductor
  • Description
    600 V, 4.7 to 7.0 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4.7 to 7.0 A
  • Drain Source Resistance
    0.89 to 0.99 ohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -25 to 25 V
  • Gate Source Threshold Voltage
    2.0 to 4.0 V
  • Gate Charge
    14 nC
  • Switching Speed
    7.2 to 26.4 ns
  • Power Dissipation
    45 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220F
  • Note
    Input Capacitance :- 363 pF

Technical Documents
View details on the manufacturer's website
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