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JSMS09

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The JSMS09 from JSMicro Semiconductor is a MOSFET with Continous Drain Current -2 A, Drain Source Resistance 160 to 280 milli-ohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -0.9 to -2.5 V. Tags: Through Hole. More details for JSMS09 can be seen below.

Product Specifications

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Product Details

  • Part Number
    JSMS09
  • Manufacturer
    JSMicro Semiconductor
  • Description
    -60 V, -2 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -2 A
  • Drain Source Resistance
    160 to 280 milli-ohm
  • Drain Source Breakdown Voltage
    -60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -0.9 to -2.5 V
  • Gate Charge
    8.5 nC
  • Switching Speed
    5.3 to 33 ns
  • Power Dissipation
    1.4 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220F
  • Applications
    Video Monitor, Power management
  • Note
    Input Capacitance :- 430 pF

Technical Documents
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