IXFB100N50P

Note : Your request will be directed to Littelfuse.

IXFB100N50P Image

The IXFB100N50P from Littelfuse is a MOSFET with Continous Drain Current 100 A, Drain Source Resistance 49 Milliohm, Drain Source Breakdown Voltage 500 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Through Hole. More details for IXFB100N50P can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IXFB100N50P
  • Manufacturer
    Littelfuse
  • Description
    -30 to 30 V, 240 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    100 A
  • Drain Source Resistance
    49 Milliohm
  • Drain Source Breakdown Voltage
    500 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    240 nC
  • Power Dissipation
    1890 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Through Hole
  • Package
    TO-264 PLUS
  • Applications
    DC-DC converters, Battery chargers, Switched-mode and resonant-mode power supplies, Uninterrupted power supplies, AC motor control, High speed power switching applications

Technical Documents

Latest MOSFETs

View more products