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IXTF1R4N450

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IXTF1R4N450 Image

The IXTF1R4N450 from Littelfuse is a MOSFET with Continous Drain Current 1.4 A, Drain Source Resistance 40000 Milliohm, Drain Source Breakdown Voltage 4500 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 4 to 6 V. Tags: Through Hole. More details for IXTF1R4N450 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IXTF1R4N450
  • Manufacturer
    Littelfuse
  • Description
    -20 to 20 V, 88 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1.4 A
  • Drain Source Resistance
    40000 Milliohm
  • Drain Source Breakdown Voltage
    4500 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    4 to 6 V
  • Gate Charge
    88 nC
  • Power Dissipation
    190 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Through Hole
  • Package
    i4-Pak
  • Applications
    High Voltage Power Supplies, Capacitor Discharge Applications, Pulse Circuits, Laser and X-Ray Generation Systems

Technical Documents
View details on the manufacturer's website
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