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IXTF6N200P3

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IXTF6N200P3 Image

The IXTF6N200P3 from Littelfuse is a MOSFET with Continous Drain Current 4 A, Drain Source Resistance 4200 Milliohm, Drain Source Breakdown Voltage 2000 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Through Hole. More details for IXTF6N200P3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IXTF6N200P3
  • Manufacturer
    Littelfuse
  • Description
    -20 to 20 V, 143 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4 A
  • Drain Source Resistance
    4200 Milliohm
  • Drain Source Breakdown Voltage
    2000 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    143 nC
  • Power Dissipation
    215 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Through Hole
  • Package
    ISOPLUS i4-Pak
  • Applications
    High Voltage Power Supplies, Capacitor Discharge Applications, Pulse Circuits, Laser and X-Ray Generation Systems

Technical Documents
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