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IXTH1R4N250P3

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IXTH1R4N250P3 Image

The IXTH1R4N250P3 from Littelfuse is a MOSFET with Continous Drain Current 1.4 A, Drain Source Resistance 28000 Milliohm, Drain Source Breakdown Voltage 2500 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for IXTH1R4N250P3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IXTH1R4N250P3
  • Manufacturer
    Littelfuse
  • Description
    -20 to 20 V, 33 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1.4 A
  • Drain Source Resistance
    28000 Milliohm
  • Drain Source Breakdown Voltage
    2500 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    33 nC
  • Power Dissipation
    195 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Through Hole
  • Package
    TO-247
  • Applications
    High Voltage Power Supplies, Capacitor Discharge Applications, Pulse Circuits, Laser and X-Ray Generation Systems

Technical Documents
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