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IXTP1N120P

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IXTP1N120P Image

The IXTP1N120P from Littelfuse is a MOSFET with Continous Drain Current 1 A, Drain Source Resistance 20000 Milliohm, Drain Source Breakdown Voltage 1200 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.5 to 4.5 V. Tags: Through Hole. More details for IXTP1N120P can be seen below.

Product Specifications

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Product Details

  • Part Number
    IXTP1N120P
  • Manufacturer
    Littelfuse
  • Description
    -30 to 30 V, 17.6 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1 A
  • Drain Source Resistance
    20000 Milliohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.5 to 4.5 V
  • Gate Charge
    17.6 nC
  • Power Dissipation
    63 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    DC-DC Converters, Switch-Mode and Resonant-Mode Power Supplies, AC and DC Motor Drives, Discharge Circiuts in Lasers, Spark Igniters, RF Generators, High Voltage Pulse Power Applications

Technical Documents
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