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IXTP1R6N100D2

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IXTP1R6N100D2 Image

The IXTP1R6N100D2 from Littelfuse is a MOSFET with Continous Drain Current 1.6 A, Drain Source Resistance 10 Milliohm, Drain Source Breakdown Voltage 1000 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -4.5 to -2.5 V. Tags: Through Hole. More details for IXTP1R6N100D2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IXTP1R6N100D2
  • Manufacturer
    Littelfuse
  • Description
    -20 to 20 V, 27 nC, N-Channel Depletion Mode MOSFET

General

  • Types of MOSFET
    N-Channel Depletion Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1.6 A
  • Drain Source Resistance
    10 Milliohm
  • Drain Source Breakdown Voltage
    1000 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -4.5 to -2.5 V
  • Gate Charge
    27 nC
  • Power Dissipation
    100 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Through Hole
  • Package
    TO-220AB
  • Applications
    Audio Amplifiers, Start-up Circuits, Protection Circuits, Ramp Generators, Current Regulators, Active Loads

Technical Documents
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