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IXTP4N65X2

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IXTP4N65X2 Image

The IXTP4N65X2 from Littelfuse is a MOSFET with Continous Drain Current 4 A, Drain Source Resistance 850 Milliohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Through Hole. More details for IXTP4N65X2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IXTP4N65X2
  • Manufacturer
    Littelfuse
  • Description
    650 V, 8.3 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4 A
  • Drain Source Resistance
    850 Milliohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    8.3 nC
  • Power Dissipation
    80 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Switch-Mode and Resonant-Mode Power Supplies, DC-DC Converters, PFC Circuits, AC and DC Motor Drives, Robotics and Servo Controls

Technical Documents
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