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IXTQ 18N60P

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IXTQ 18N60P Image

The IXTQ 18N60P from Littelfuse is a MOSFET with Continous Drain Current 18 A, Drain Source Resistance 420 Milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5.5 V. Tags: Through Hole. More details for IXTQ 18N60P can be seen below.

Product Specifications

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Product Details

  • Part Number
    IXTQ 18N60P
  • Manufacturer
    Littelfuse
  • Description
    -30 to 30 V, 49 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    18 A
  • Drain Source Resistance
    420 Milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5.5 V
  • Gate Charge
    49 nC
  • Power Dissipation
    360 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Through Hole
  • Package
    TO-3P
  • Applications
    DC-DC Converters, Battery Chargers, Switch-Mode and Resonant-Mode Power Supplies, Lamp ballasts, AC and DC Motor Drives, Robotics and Servo Controls, Laser drivers

Technical Documents
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