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IXTQ180N10T

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IXTQ180N10T Image

The IXTQ180N10T from Littelfuse is a MOSFET with Continous Drain Current 180 A, Drain Source Resistance 6.4 Milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.5 to 4.5 V. Tags: Through Hole. More details for IXTQ180N10T can be seen below.

Product Specifications

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Product Details

  • Part Number
    IXTQ180N10T
  • Manufacturer
    Littelfuse
  • Description
    -30 to 30 V, 151 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    180 A
  • Drain Source Resistance
    6.4 Milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.5 to 4.5 V
  • Gate Charge
    151 nC
  • Power Dissipation
    480 W
  • Temperature operating range
    -55 to 175 Degree C
  • Package Type
    Through Hole
  • Package
    TO-3P
  • Applications
    Automotive - Motor Drives - 42V Power Bus - ABS Systems, DC/DC Converters and Off-line UPS, Primary Switch for 24V and 48V Systems, Distributed Power Architechtures and VRMs, Electronic Valve Train Systems, High Current Switching Applications, High Voltage Synchronous Recifier

Technical Documents
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