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IXTQ200N10T

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IXTQ200N10T Image

The IXTQ200N10T from Littelfuse is a MOSFET with Continous Drain Current 200 A, Drain Source Resistance 5.5 Milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.5 to 4.5 V. Tags: Through Hole. More details for IXTQ200N10T can be seen below.

Product Specifications

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Product Details

  • Part Number
    IXTQ200N10T
  • Manufacturer
    Littelfuse
  • Description
    -30 to 30 V, 152 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    200 A
  • Drain Source Resistance
    5.5 Milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.5 to 4.5 V
  • Gate Charge
    152 nC
  • Power Dissipation
    550 W
  • Temperature operating range
    -55 to 175 Degree C
  • Package Type
    Through Hole
  • Package
    TO-3P
  • Applications
    Automotive - Motor Drives - 12V Battery - ABS Systems, DC/DC Converters and Off-line UPS, Primary- Side Switch, High Current Switching Applications

Technical Documents
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