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IXTQ3N150M

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IXTQ3N150M Image

The IXTQ3N150M from Littelfuse is a MOSFET with Continous Drain Current 3 A, Drain Source Resistance 7300 Milliohm, Drain Source Breakdown Voltage 1500 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.5 to 5 V. Tags: Through Hole. More details for IXTQ3N150M can be seen below.

Product Specifications

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Product Details

  • Part Number
    IXTQ3N150M
  • Manufacturer
    Littelfuse
  • Description
    -30 to 30 V, 38.6 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    3 A
  • Drain Source Resistance
    7300 Milliohm
  • Drain Source Breakdown Voltage
    1500 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.5 to 5 V
  • Gate Charge
    38.6 nC
  • Power Dissipation
    73 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Through Hole
  • Package
    TO-3P
  • Applications
    High Voltage Power Supplies, Capacitor Discharge Applications, Pulse Circuits

Technical Documents
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