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IXTR210P10T

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IXTR210P10T Image

The IXTR210P10T from Littelfuse is a MOSFET with Continous Drain Current -195 A, Drain Source Resistance 8 milliohm, Drain Source Breakdown Voltage -100 V, Gate Source Voltage -15 to 15 V, Gate Source Threshold Voltage -4.5 to -2.5 V. Tags: Through Hole. More details for IXTR210P10T can be seen below.

Product Specifications

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Product Details

  • Part Number
    IXTR210P10T
  • Manufacturer
    Littelfuse
  • Description
    -100 V, 740 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -195 A
  • Drain Source Resistance
    8 milliohm
  • Drain Source Breakdown Voltage
    -100 V
  • Gate Source Voltage
    -15 to 15 V
  • Gate Source Threshold Voltage
    -4.5 to -2.5 V
  • Gate Charge
    740 nC
  • Power Dissipation
    595 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Through Hole
  • Package
    PLUS247
  • Applications
    High-Side Switches, Push Pull Amplifiers, DC Choppers, Automatic Test Equipment, Current Regulators, Battery Charger Applications

Technical Documents
View details on the manufacturer's website
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