IXTT1N250HV

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IXTT1N250HV Image

The IXTT1N250HV from Littelfuse is a MOSFET with Continous Drain Current 1.5 A, Drain Source Resistance 40000 Milliohm, Drain Source Breakdown Voltage 2500 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for IXTT1N250HV can be seen below.

Product Specifications

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Product Details

  • Part Number
    IXTT1N250HV
  • Manufacturer
    Littelfuse
  • Description
    -20 to 20 V, 41 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1.5 A
  • Drain Source Resistance
    40000 Milliohm
  • Drain Source Breakdown Voltage
    2500 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    41 nC
  • Power Dissipation
    250 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Surface Mount
  • Package
    TO-268S
  • Applications
    High Voltage Power Supplies, Capacitor Discharge, Pulse Circuits

Technical Documents

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