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IXTY1R4N100P

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IXTY1R4N100P Image

The IXTY1R4N100P from Littelfuse is a MOSFET with Continous Drain Current 1.4 A, Drain Source Resistance 11800 Milliohm, Drain Source Breakdown Voltage 1000 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.5 to 4.5 V. Tags: Surface Mount. More details for IXTY1R4N100P can be seen below.

Product Specifications

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Product Details

  • Part Number
    IXTY1R4N100P
  • Manufacturer
    Littelfuse
  • Description
    -20 to 20 V, 17.8 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1.4 A
  • Drain Source Resistance
    11800 Milliohm
  • Drain Source Breakdown Voltage
    1000 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.5 to 4.5 V
  • Gate Charge
    17.8 nC
  • Power Dissipation
    63 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Surface Mount
  • Package
    TO-252
  • Applications
    DC-DC Converters, Switch-Mode and Resonant-Mode Power Supplies, AC and DC Motor Drives, Laser Drivers Igniters, RF Generators, Robotics and Servo Controls

Technical Documents
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