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MDD4N60RH

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The MDD4N60RH from Magnachip Semiconductor is a MOSFET with Continous Drain Current 2.2 to 3.5 A, Drain Source Resistance 1.7 to 2.0 ohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3.0 to 5.0 V. Tags: Surface Mount. More details for MDD4N60RH can be seen below.

Product Specifications

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Product Details

  • Part Number
    MDD4N60RH
  • Manufacturer
    Magnachip Semiconductor
  • Description
    -30 to 30 V, 12.1 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2.2 to 3.5 A
  • Drain Source Resistance
    1.7 to 2.0 ohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3.0 to 5.0 V
  • Gate Charge
    12.1 nC
  • Switching Speed
    12 to 27 ns
  • Power Dissipation
    67.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK
  • Applications
    Power Supply, PFC, High Current, High Speed Switching

Technical Documents
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