MDD7N20CRH

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The MDD7N20CRH from Magnachip Semiconductor is a MOSFET with Continous Drain Current 3.1 to 5.0 A, Drain Source Resistance 0.58 to 0.69 ohm, Drain Source Breakdown Voltage 200 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.0 to 4.0 V. Tags: Surface Mount. More details for MDD7N20CRH can be seen below.

Product Specifications

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Product Details

  • Part Number
    MDD7N20CRH
  • Manufacturer
    Magnachip Semiconductor
  • Description
    -30 to 30 V, 5.1 nC, N-Channel Enhancement Mode, MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    3.1 to 5.0 A
  • Drain Source Resistance
    0.58 to 0.69 ohm
  • Drain Source Breakdown Voltage
    200 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.0 to 4.0 V
  • Gate Charge
    5.1 nC
  • Switching Speed
    6.3 to 23 ns
  • Power Dissipation
    38.4 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    DPAK
  • Applications
    Power Supply, PFC, LED TV

Technical Documents

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