MDD7N25RH

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MDD7N25RH Image

The MDD7N25RH from Magnachip Semiconductor is an N-Channel MOSFET that is ideal for switched mode power supplies (SMPS), high-intensity discharge lamps (HID), LED TV, power factor correction (PFC), and general-purpose applications. This MOSFET has a drain-source breakdown voltage of over 250 V, a gate threshold voltage of up to 5 V, and a drain-source on-resistance of less than 0.55 ohms. It has a continuous drain current of up to 6.2 A and a power dissipation of less than 56 W. This MOSFET utilizes Magnachip’s advanced MOSFET technology. It offers a low on-state resistance, high switching performance and excellent quality during operation. This RoHS-compliant power MOSFET is available in a surface mount package that measures 10.41 x 6.73 x 2.39 mm.

Product Specifications

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Product Details

  • Part Number
    MDD7N25RH
  • Manufacturer
    Magnachip Semiconductor
  • Description
    250 V N-Channel MOSFET for Power Factor Correction Applications

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Dimensions
    10.41 x 6.73 x 2.39 mm
  • Number of Channels
    Single
  • Continous Drain Current
    6.2 A
  • Drain Source Resistance
    0.55 ohm
  • Drain Source Breakdown Voltage
    250 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    5 V
  • Gate Charge
    10.4 nC
  • Switching Speed
    12 to 43 ns
  • Power Dissipation
    56 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK
  • Applications
    Switched mode power supplies (SMPS), High-intensity discharge lamps (HID), LED TV, Power factor correction (PFC), and General-purpose applications

Technical Documents

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