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MDD9N40RH

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The MDD9N40RH from Magnachip Semiconductor is a MOSFET with Continous Drain Current 3.79 to 6.0 A, Drain Source Resistance 0.67 to 0.85 ohm, Drain Source Breakdown Voltage 400 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3.0 to 5.0 V. Tags: Surface Mount. More details for MDD9N40RH can be seen below.

Product Specifications

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Product Details

  • Part Number
    MDD9N40RH
  • Manufacturer
    Magnachip Semiconductor
  • Description
    -30 to 30 V, 9.6 nC, N-Channel Enhancement Mode, MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    3.79 to 6.0 A
  • Drain Source Resistance
    0.67 to 0.85 ohm
  • Drain Source Breakdown Voltage
    400 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3.0 to 5.0 V
  • Gate Charge
    9.6 nC
  • Switching Speed
    12.6 to 32 ns
  • Power Dissipation
    69.4 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK
  • Applications
    Power Supply, PFC, High Current, High Speed Switching

Technical Documents
View details on the manufacturer's website
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