The MDES15N056PTRH from Magnachip Semiconductor is a Single N-channel Trench MOSFET that is ideal for DC-DC and AC-DC converters, BLDC motor drive systems, and battery-powered applications. This MOSFET has a drain-source breakdown voltage of over 150 V, a gate threshold voltage of 3.1 V, and a drain-source on-resistance of 4.83 milli-ohms. It has a continuous drain current of up to 182 A and a power dissipation of less than 484 W. This MOSFET utilizes Magnachip’s Trench power MOSFET technology. It offers enhanced avalanche ruggedness and can withstand a junction temperature of up to 175°C. This RoHS-compliant power MOSFET is available in a through-hole package that measures 9.68 x 14.61 mm.