1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Magnachip Semiconductor
  6. MDF10N65BTH

MDF10N65BTH

Download Datasheet Request Quote

Note : Your request will be directed to Magnachip Semiconductor.

The MDF10N65BTH from Magnachip Semiconductor is a MOSFET with Continous Drain Current 5.0 to 10.0 A, Drain Source Resistance 0.85 to 1.0 ohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.0 to 4.0 V. Tags: Through Hole. More details for MDF10N65BTH can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    MDF10N65BTH
  • Manufacturer
    Magnachip Semiconductor
  • Description
    -30 to 30 V, 29.3 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    5.0 to 10.0 A
  • Drain Source Resistance
    0.85 to 1.0 ohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.0 to 4.0 V
  • Gate Charge
    29.3 nC
  • Switching Speed
    19.4 to 96.5 ns
  • Power Dissipation
    47.7 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220F
  • Applications
    Power Supply, PFC, High Current, High Speed Switching

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products