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MDF13N65BTH

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The MDF13N65BTH from Magnachip Semiconductor is a MOSFET with Continous Drain Current 8.8 to 14 A, Drain Source Resistance 0.40 to 0.46 ohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.0 to 4.0 V. Tags: Through Hole. More details for MDF13N65BTH can be seen below.

Product Specifications

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Product Details

  • Part Number
    MDF13N65BTH
  • Manufacturer
    Magnachip Semiconductor
  • Description
    -30 to 30 V, 54.0 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    8.8 to 14 A
  • Drain Source Resistance
    0.40 to 0.46 ohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.0 to 4.0 V
  • Gate Charge
    54.0 nC
  • Switching Speed
    32 to 204 ns
  • Power Dissipation
    36.7 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220F
  • Applications
    Power Supply, PFC, High Current, High Speed Switching

Technical Documents
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