1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Magnachip Semiconductor
  6. MDIS4N65BTH

MDIS4N65BTH

Download Datasheet Request Quote

Note : Your request will be directed to Magnachip Semiconductor.

The MDIS4N65BTH from Magnachip Semiconductor is a MOSFET with Continous Drain Current 2.3 to 3.65 A, Drain Source Resistance 1.8 to 2.2 ohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.0 to 4.0 V. Tags: Surface Mount. More details for MDIS4N65BTH can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    MDIS4N65BTH
  • Manufacturer
    Magnachip Semiconductor
  • Description
    -30 to 30 V, 11.6 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2.3 to 3.65 A
  • Drain Source Resistance
    1.8 to 2.2 ohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.0 to 4.0 V
  • Gate Charge
    11.6 nC
  • Switching Speed
    13 to 41 ns
  • Power Dissipation
    68.3 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    IPAK
  • Applications
    Power Supply, PFC, High Current, High Speed Switching

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products