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MDP11N60TH

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The MDP11N60TH from Magnachip Semiconductor is a MOSFET with Continous Drain Current 6.9 to 11 A, Drain Source Resistance 0.45 to 0.55 ohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3.0 to 5.0 V. Tags: Through Hole. More details for MDP11N60TH can be seen below.

Product Specifications

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Product Details

  • Part Number
    MDP11N60TH
  • Manufacturer
    Magnachip Semiconductor
  • Description
    -30 to 30 V, 38.4 nC, N-Channel Enhancement Mode, MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    6.9 to 11 A
  • Drain Source Resistance
    0.45 to 0.55 ohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3.0 to 5.0 V
  • Gate Charge
    38.4 nC
  • Switching Speed
    33 to 76 ns
  • Power Dissipation
    182 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Power Supply, PFC, High Current, High Speed Switching

Technical Documents
View details on the manufacturer's website
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