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MDP14N25CTH

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The MDP14N25CTH from Magnachip Semiconductor is a MOSFET with Continous Drain Current 8.8 to 14 A, Drain Source Resistance 0.22 to 0.28 ohm, Drain Source Breakdown Voltage 250 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.0 to 4.0 V. Tags: Through Hole. More details for MDP14N25CTH can be seen below.

Product Specifications

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Product Details

  • Part Number
    MDP14N25CTH
  • Manufacturer
    Magnachip Semiconductor
  • Description
    -30 to 30 V, 20.0 nC, N-Channel Enhancement Mode, MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    8.8 to 14 A
  • Drain Source Resistance
    0.22 to 0.28 ohm
  • Drain Source Breakdown Voltage
    250 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.0 to 4.0 V
  • Gate Charge
    20.0 nC
  • Switching Speed
    13 to 44 ns
  • Power Dissipation
    126.3 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Power Supply, Motor Control, High Current, High Speed Switching

Technical Documents
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