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MDP15N075TH

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The MDP15N075TH from Magnachip Semiconductor is a MOSFET with Continous Drain Current 120 A, Drain Source Resistance 6.2 to 7.5 milli-ohm, Drain Source Breakdown Voltage 150 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.1 to 4.1 V. Tags: Through Hole. More details for MDP15N075TH can be seen below.

Product Specifications

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Product Details

  • Part Number
    MDP15N075TH
  • Manufacturer
    Magnachip Semiconductor
  • Description
    150 V, 120 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    120 A
  • Drain Source Resistance
    6.2 to 7.5 milli-ohm
  • Drain Source Breakdown Voltage
    150 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.1 to 4.1 V
  • Gate Charge
    91 nC
  • Switching Speed
    20 to 69 ns
  • Power Dissipation
    312 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial, Automotive
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Power Drives of E-bike (E-Vehicles), DC/DC converter, and general purpose applications
  • Note
    Input Capacitance :- 6220 pF

Technical Documents
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